Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor SSI3N80A Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:800 V,Number of Elements:1,Drain Current-Max (Abs) (ID):3 A,Drain Current-Max (ID):3 A,Drain-source On Resistance-Max:4.8 ?
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Samsung
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Modules
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