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SSH6N60A

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Samsung SSH6N60A

Samsung SSH6N60A overview

Samsung Semiconductor SSH6N60A Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number o...

Manufactured bySamsung
Part number or familySSH6N60A
Product groupModules

Product details

Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor SSH6N60A Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:600 V,Number of Elements:1,Drain Current-Max (Abs) (ID):6 A,Drain Current-Max (ID):6 A,Drain-source On Resistance-Max:1.2 ?

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