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SSD2015

Samsung · Modules

Samsung SSD2015

Samsung SSD2015 overview

Samsung Semiconductor SSD2015 Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS, Number of T...

Manufactured bySamsung
Part number or familySSD2015
Product groupModules

Product details

Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor SSD2015 Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS, Number of Terminals:8, DS Breakdown Voltage-Min:12 V, Number of Elements:2, Drain Current-Max (Abs) (ID):3.8 A, Drain Current-Max (ID):3.2 A, Drain-source On Resistance-Max:130 mΩ

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