Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor SSD2009 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS, Number of Terminals:8, DS Breakdown Voltage-Min:50 V, Number of Elements:2, Drain Current-Max (Abs) (ID):2 A, Drain Current-Max (ID):3 A, Drain-source On Resistance-Max:130 mΩ
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Samsung
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Modules
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