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SSD2002

Samsung · Modules

Samsung SSD2002

Samsung SSD2002 overview

Samsung Semiconductor SSD2002 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL AND P-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENT...

Manufactured bySamsung
Part number or familySSD2002
Product groupModules

Product details

Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor SSD2002 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL AND P-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS, Number of Terminals:8, DS Breakdown Voltage-Min:25 V, Number of Elements:2, Drain Current-Max (Abs) (ID):3.5 A, Drain Current-Max (ID):3.5 A, Drain-source On Resistance-Max:100 mΩ

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