Samsung IRLR010 overview
IRLR010 is made by Samsung. Samsung Semiconductor IRLR010 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE,Number of Terminals:2,DS Breakdown Voltage-Min:50 V,Number of Elements:1,Drain Current-Max (Abs) (ID):6.7 A,Drain Current-Max (ID):6.7 A,Drain-source On…
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Manufactured bySamsung
DescriptionSamsung Semiconductor IRLR010 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE,Number of Terminals:2,DS Breakdown Voltage-Min:50 V,Number of Elements:1,Drain Current-Max (Abs) (ID):6.7 A,Drain Current-Max (ID):6.7 A,Drain-source On Resistance-Max:300 m?
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