Samsung IRL521 overview
IRL521 is made by Samsung. Samsung Semiconductor IRL521 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE,Number of Terminals:3,DS Breakdown Voltage-Min:80 V,Number of Elements:1,Drain Current-Max (Abs) (ID):7.9 A,Drain Current-Max (ID):7.9 A,Drain-source On…
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Manufactured bySamsung
DescriptionSamsung Semiconductor IRL521 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE,Number of Terminals:3,DS Breakdown Voltage-Min:80 V,Number of Elements:1,Drain Current-Max (Abs) (ID):7.9 A,Drain Current-Max (ID):7.9 A,Drain-source On Resistance-Max:400 m?
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