Samsung IRFW710A overview
IRFW710A is made by Samsung. Samsung Semiconductor IRFW710A Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:400 V,Number of Elements:1,Drain Current-Max (Abs) (ID):2 A,Drain Current-Max (ID):2…
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Manufactured bySamsung
DescriptionSamsung Semiconductor IRFW710A Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:400 V,Number of Elements:1,Drain Current-Max (Abs) (ID):2 A,Drain Current-Max (ID):2 A,Drain-source On Resistance-Max:3.6 ?
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