Samsung IRFSZ44A overview
IRFSZ44A is made by Samsung. Samsung Semiconductor IRFSZ44A Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:60 V,Number of Elements:1,Drain Current-Max (Abs) (ID):30 A,Drain Current-Max (ID):30…
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Manufactured bySamsung
DescriptionSamsung Semiconductor IRFSZ44A Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:60 V,Number of Elements:1,Drain Current-Max (Abs) (ID):30 A,Drain Current-Max (ID):30 A,Drain-source On Resistance-Max:24 m?
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