Samsung IRFS9531 overview
IRFS9531 is made by Samsung. Samsung Semiconductor IRFS9531 Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL,Surface Mount:NO,Configuration:SINGLE,Number of Terminals:3,DS Breakdown Voltage-Min:60 V,Number of Elements:1,Drain Current-Max (Abs) (ID):8 A,Drain Current-Max (ID):8 A,Drain-source On…
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Manufactured bySamsung
DescriptionSamsung Semiconductor IRFS9531 Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL,Surface Mount:NO,Configuration:SINGLE,Number of Terminals:3,DS Breakdown Voltage-Min:60 V,Number of Elements:1,Drain Current-Max (Abs) (ID):8 A,Drain Current-Max (ID):8 A,Drain-source On Resistance-Max:300 m?
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