Samsung IRFS721 overview
IRFS721 is made by Samsung. Samsung Semiconductor IRFS721 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3, DS Breakdown Voltage-Min:350 V, Number of Elements:1, Drain Current-Max (Abs) (ID):2.5 A, Drain Current-Max (ID):2.6 A, Drain-source…
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Manufactured bySamsung
DescriptionSamsung Semiconductor IRFS721 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3, DS Breakdown Voltage-Min:350 V, Number of Elements:1, Drain Current-Max (Abs) (ID):2.5 A, Drain Current-Max (ID):2.6 A, Drain-source On Resistance-Max:1.8 Ω
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