Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor IRFS634A Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:250 V, Number of Elements:1, Drain Current-Max (Abs) (ID):5.8 A, Drain Current-Max (ID):5.8 A, Drain-source On Resistance-Max:450 mΩ
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
Samsung
View Samsung profile
Available from
Sourcing support available
Start a sourcing request