Samsung IRFS624 overview
Samsung Semiconductor IRFS624 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3, DS ...
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Manufactured bySamsung
DescriptionSamsung Semiconductor IRFS624 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3, DS Breakdown Voltage-Min:250 V, Number of Elements:1, Drain Current-Max (Abs) (ID):3.3 A, Drain Current-Max (ID):3.4 A, Drain-source On Resistance-Max:1.1 Ω
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