Samsung IRFS610A overview
IRFS610A is made by Samsung. Samsung Semiconductor IRFS610A Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:200 V, Number of Elements:1, Drain Current-Max (Abs) (ID):2.5 A, Drain Current-Max…
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Manufactured bySamsung
DescriptionSamsung Semiconductor IRFS610A Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:200 V, Number of Elements:1, Drain Current-Max (Abs) (ID):2.5 A, Drain Current-Max (ID):2.5 A, Drain-source On Resistance-Max:1.5 Ω
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