Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor IRFS452 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE,Number of Terminals:3,DS Breakdown Voltage-Min:500 V,Number of Elements:1,Drain Current-Max (ID):8.3 A,Drain-source On Resistance-Max:500 m?
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Samsung
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Modules
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