Samsung IRFS430 overview
IRFS430 is made by Samsung. Samsung Semiconductor IRFS430 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE,Number of Terminals:3,DS Breakdown Voltage-Min:500 V,Number of Elements:1,Drain Current-Max (ID):3.1 A,Drain-source On Resistance-Max:1.5 ?
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Manufactured bySamsung
DescriptionSamsung Semiconductor IRFS430 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE,Number of Terminals:3,DS Breakdown Voltage-Min:500 V,Number of Elements:1,Drain Current-Max (ID):3.1 A,Drain-source On Resistance-Max:1.5 ?
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