Samsung IRFS333 overview
Samsung Semiconductor IRFS333 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE, Number of Terminals:3, DS...
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Manufactured bySamsung
DescriptionSamsung Semiconductor IRFS333 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE, Number of Terminals:3, DS Breakdown Voltage-Min:350 V, Number of Elements:1, Drain Current-Max (ID):3.5 A, Drain-source On Resistance-Max:1.5 Ω
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