Samsung IRFS130 overview
Samsung Semiconductor IRFS130 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE,Number of Terminals:3,DS Bre...
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Manufactured bySamsung
DescriptionSamsung Semiconductor IRFS130 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE,Number of Terminals:3,DS Breakdown Voltage-Min:100 V,Number of Elements:1,Drain Current-Max (ID):9.7 A,Drain-source On Resistance-Max:160 m?
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