Samsung IRFR9010 overview
Samsung Semiconductor IRFR9010 Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL,Surface Mount:YES,Configuration:SINGLE,Number of Terminals:2,DS Br...
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Manufactured bySamsung
DescriptionSamsung Semiconductor IRFR9010 Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL,Surface Mount:YES,Configuration:SINGLE,Number of Terminals:2,DS Breakdown Voltage-Min:50 V,Number of Elements:1,Drain Current-Max (Abs) (ID):5.3 A,Drain Current-Max (ID):5.3 A,Drain-source On Resistance-Max:500 m?
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