Samsung IRFR312 overview
IRFR312 is made by Samsung. Samsung Semiconductor IRFR312 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:400 V, Number of Elements:1, Drain Current-Max (ID):1 A, Drain-source On…
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Manufactured bySamsung
DescriptionSamsung Semiconductor IRFR312 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:400 V, Number of Elements:1, Drain Current-Max (ID):1 A, Drain-source On Resistance-Max:5 Ω
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