Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor IRFP133 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:80 V, Number of Elements:1, Drain Current-Max (Abs) (ID):12 A, Drain Current-Max (ID):12 A, Drain-source On Resistance-Max:230 mΩ
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Samsung
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Modules
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