Samsung IRF9Z22 overview
Samsung Semiconductor IRF9Z22 Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number...
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Manufactured bySamsung
DescriptionSamsung Semiconductor IRF9Z22 Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:50 V, Number of Elements:1, Drain Current-Max (Abs) (ID):8.9 A, Drain Current-Max (ID):8.9 A, Drain-source On Resistance-Max:330 mΩ
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