Samsung KSH350-I overview
KSH350-I is made by Samsung. Samsung Semiconductor KSH350-I Power Bipolar Transistor, Collector-Emitter Voltage-Max:300 V, Collector Current-Max (IC):500 mΩ, Polarity/Channel Type:PNP, Surface mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):30
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Manufactured bySamsung
DescriptionSamsung Semiconductor KSH350-I Power Bipolar Transistor, Collector-Emitter Voltage-Max:300 V, Collector Current-Max (IC):500 mΩ, Polarity/Channel Type:PNP, Surface mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):30
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