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KSH29-TF

Samsung · Modules

Samsung KSH29-TF

Samsung KSH29-TF overview

Samsung Semiconductor KSH29-TF Power Bipolar Transistor, Collector-Emitter Voltage-Max:40 V, Collector Current-Max (IC):1 A, Polarity/Channel Type:NPN, Surface ...

Manufactured bySamsung
Part number or familyKSH29-TF
Product groupModules

Product details

Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor KSH29-TF Power Bipolar Transistor, Collector-Emitter Voltage-Max:40 V, Collector Current-Max (IC):1 A, Polarity/Channel Type:NPN, Surface mount:YES, Configuration:SINGLE, Number of Terminals:2, Number of Elements:1, DC Current Gain-Min (hFE):15, Transition Frequency-Nom (fT):3 mΩz

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