Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor KSH200-I Power Bipolar Transistor, Collector-Emitter Voltage-Max:25 V, Collector Current-Max (IC):5 A, Polarity/Channel Type:NPN, Surface mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):10, Transition Frequency-Nom (fT):65 mΩz
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Samsung
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Modules
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