Samsung KSH122-I overview
Samsung Semiconductor KSH122-I Power Bipolar Transistor, Collector-Emitter Voltage-Max:100 V, Collector Current-Max (IC):8 A, Polarity/Channel Type:NPN, Surface...
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Manufactured bySamsung
DescriptionSamsung Semiconductor KSH122-I Power Bipolar Transistor, Collector-Emitter Voltage-Max:100 V, Collector Current-Max (IC):8 A, Polarity/Channel Type:NPN, Surface mount:NO, Configuration:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):100
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