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KSH122

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Samsung KSH122

Samsung KSH122 overview

Samsung Semiconductor KSH122 Power Bipolar Transistor, Collector-Emitter Voltage-Max:100 V, Collector Current-Max (IC):8 A, Polarity/Channel Type:NPN, Surface m...

Manufactured bySamsung
Part number or familyKSH122
Product groupModules

Product details

Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor KSH122 Power Bipolar Transistor, Collector-Emitter Voltage-Max:100 V, Collector Current-Max (IC):8 A, Polarity/Channel Type:NPN, Surface mount:YES, Configuration:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR, Number of Terminals:2, Number of Elements:1, DC Current Gain-Min (hFE):100

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