Samsung KSH117-I overview
Samsung Semiconductor KSH117-I Power Bipolar Transistor, Collector-Emitter Voltage-Max:100 V, Collector Current-Max (IC):2 A, Polarity/Channel Type:PNP, Surface...
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Manufactured bySamsung
DescriptionSamsung Semiconductor KSH117-I Power Bipolar Transistor, Collector-Emitter Voltage-Max:100 V, Collector Current-Max (IC):2 A, Polarity/Channel Type:PNP, Surface mount:NO, Configuration:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):200, Transition Frequency-Nom (fT):25 mΩz
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