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KM416S4030BT-G8

Samsung ยท DRAM's

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Samsung KM416S4030BT-G8

Samsung KM416S4030BT-G8 overview

Samsung Semiconductor KM416S4030BT-G8 Dram, Memory Density:67.1089 Mbit, Memory Width:16, Organization:4MX16, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3....

Manufactured bySamsung
Part number or familyKM416S4030BT-G8
Product groupDRAM's

Product details

Manufactured bySamsung
Product groupDRAM's
DescriptionSamsung Semiconductor KM416S4030BT-G8 Dram, Memory Density:67.1089 Mbit, Memory Width:16, Organization:4MX16, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:6 ns, Clock Frequency-Max (fCLK):125 MHz, Refresh Cycles:4096, Access Mode:FOUR BANK PAGE BURST

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Manufactured by Samsung View Samsung profile
Product group DRAM's Explore DRAM's Explore Memory
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