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KM416S1120AT-G10

Samsung ยท DRAM's

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Samsung KM416S1120AT-G10

Samsung KM416S1120AT-G10 overview

Samsung Semiconductor KM416S1120AT-G10 Dram, Memory Density:16.7772 Mbit, Memory Width:16, Organization:1MX16, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3...

Manufactured bySamsung
Part number or familyKM416S1120AT-G10
Product groupDRAM's

Product details

Manufactured bySamsung
Product groupDRAM's
DescriptionSamsung Semiconductor KM416S1120AT-G10 Dram, Memory Density:16.7772 Mbit, Memory Width:16, Organization:1MX16, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:8 ns, Clock Frequency-Max (fCLK):100 MHz, Refresh Cycles:2048

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Product group DRAM's Explore DRAM's Explore Memory
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