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K4S641632C-TC60

Samsung ยท DRAM's

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Samsung K4S641632C-TC60

Samsung K4S641632C-TC60 overview

SAMSUNG K4S641632C-TC60 Integrated Circuit Samsung Semiconductor K4S641632C-TC60 Dram, Memory Density:67.1089 Mbit, Memory Width:16, Organization:4MX16, Supply ...

Manufactured bySamsung
Part number or familyK4S641632C-TC60
Product groupDRAM's

Product details

Manufactured bySamsung
Product groupDRAM's
DescriptionSAMSUNG K4S641632C-TC60 Integrated Circuit
DescriptionSamsung Semiconductor K4S641632C-TC60 Dram, Memory Density:67.1089 Mbit, Memory Width:16, Organization:4MX16, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:5.5 ns, Clock Frequency-Max (fCLK):166 MHz, Refresh Cycles:4096, Access Mode:FOUR BANK PAGE BURST

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Product group DRAM's Explore DRAM's Explore Integrated Circuits (ICs) Explore Memory
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