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K4S281632M-TC1LT

Samsung ยท DRAM's

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Samsung K4S281632M-TC1LT

Samsung K4S281632M-TC1LT overview

Samsung Semiconductor K4S281632M-TC1LT Dram, Memory Density:134.2177 Mbit, Memory Width:16, Organization:8MX16, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:...

Manufactured bySamsung
Part number or familyK4S281632M-TC1LT
Product groupDRAM's

Product details

Manufactured bySamsung
Product groupDRAM's
DescriptionSamsung Semiconductor K4S281632M-TC1LT Dram, Memory Density:134.2177 Mbit, Memory Width:16, Organization:8MX16, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:6 ns, Clock Frequency-Max (fCLK):100 MHz, Refresh Cycles:4096

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Product group DRAM's Explore DRAM's Explore Memory
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