Product details
Manufactured bySamsung
Product groupDRAM's
DescriptionSAMSUNG K4H641638Q-LCCC Integrated Circuit, SAMSUNG TSSOP66
DescriptionSamsung Semiconductor K4H641638Q-LCCC Dram, Memory Density:67.1089 Mbit, Memory Width:16, Organization:4MX16, Supply Voltage-Nom (Vsup):2.5 V, Power Supplies:2.5 V, Access Time-Max:650 ps, Clock Frequency-Max (fCLK):400 MHz, Refresh Cycles:4096
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