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K4H560438N-LCB30

Samsung ยท DRAM's

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Samsung K4H560438N-LCB30

Samsung K4H560438N-LCB30 overview

Samsung Semiconductor K4H560438N-LCB30 Dram, Memory Density:268.4355 Mbit, Memory Width:4, Organization:64MX4, Supply Voltage-Nom (Vsup):2.5 V, Power Supplies:2...

Manufactured bySamsung
Part number or familyK4H560438N-LCB30
Product groupDRAM's

Product details

Manufactured bySamsung
Product groupDRAM's
DescriptionSamsung Semiconductor K4H560438N-LCB30 Dram, Memory Density:268.4355 Mbit, Memory Width:4, Organization:64MX4, Supply Voltage-Nom (Vsup):2.5 V, Power Supplies:2.5 V, Access Time-Max:700 ps, Clock Frequency-Max (fCLK):166 MHz, Refresh Cycles:8192, Access Mode:FOUR BANK PAGE BURST

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Product group DRAM's Explore DRAM's Explore Memory
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