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✓Product overview Samsung

K4B1G0846F-HCF80

Samsung ยท DRAM's

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Samsung K4B1G0846F-HCF80

Samsung K4B1G0846F-HCF80 overview

Samsung Semiconductor K4B1G0846F-HCF80 Dram, Memory Density:1.0737 Gbit, Memory Width:8, Organization:128MX8, Supply Voltage-Nom (Vsup):1.5 V, Power Supplies:1....

Manufactured bySamsung
Part number or familyK4B1G0846F-HCF80
Product groupDRAM's

Product details

Manufactured bySamsung
Product groupDRAM's
DescriptionSamsung Semiconductor K4B1G0846F-HCF80 Dram, Memory Density:1.0737 Gbit, Memory Width:8, Organization:128MX8, Supply Voltage-Nom (Vsup):1.5 V, Power Supplies:1.5 V, Access Time-Max:300 ps, Clock Frequency-Max (fCLK):533 MHz, Refresh Cycles:8192, Access Mode:MULTI BANK PAGE BURST

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Manufactured by Samsung View Samsung profile
Product group DRAM's Explore DRAM's Explore Memory
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