Samsung K3P4C1000E-GC15 overview
K3P4C1000E 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5 Samsung Semiconductor K3P4C1000E-GC15 Mask Rom, Memory Density:8.38...
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Manufactured bySamsung
DescriptionK3P4C1000E 8M-Bit(1Mx8,512Kx16) CMOS Mask ROM ; Organization = 1Mx8,512Kx16 ; Voltage(V) = 5
DescriptionSamsung Semiconductor K3P4C1000E-GC15 Mask Rom, Memory Density:8.3886 Mbit, Memory Width:16, Organization:512KX16, Supply Voltage-Nom (Vsup):5 V, Power Supplies:5 V, Access Time-Max:150 ns
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