Samsung K3P4C1000E-GC100 overview
Samsung Semiconductor K3P4C1000E-GC100 Mask Rom, Memory Density:8.3886 Mbit, Memory Width:16, Organization:512KX16, Supply Voltage-Nom (Vsup):5 V, Access Time-M...
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Part number or familyK3P4C1000E-GC100
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Manufactured bySamsung
DescriptionSamsung Semiconductor K3P4C1000E-GC100 Mask Rom, Memory Density:8.3886 Mbit, Memory Width:16, Organization:512KX16, Supply Voltage-Nom (Vsup):5 V, Access Time-Max:100 ns
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