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K3N4C1000E-GC150

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Samsung K3N4C1000E-GC150

Samsung K3N4C1000E-GC150 overview

Samsung Semiconductor K3N4C1000E-GC150 Mask Rom, Memory Density:8.3886 Mbit, Memory Width:16, Organization:512KX16, Supply Voltage-Nom (Vsup):5 V, Access Time-M...

Manufactured bySamsung
Part number or familyK3N4C1000E-GC150
Product groupModules

Product details

Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor K3N4C1000E-GC150 Mask Rom, Memory Density:8.3886 Mbit, Memory Width:16, Organization:512KX16, Supply Voltage-Nom (Vsup):5 V, Access Time-Max:150 ns

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