Samsung K3N4C1000E-GC10 overview
K3N4C1000E-GC10 is made by Samsung. Samsung Semiconductor K3N4C1000E-GC10 Mask Rom, Memory Density:8.3886 Mbit, Memory Width:16, Organization:512KX16, Supply Voltage-Nom (Vsup):5 V, Power Supplies:5 V, Access Time-Max:100 ns
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Manufactured bySamsung
DescriptionSamsung Semiconductor K3N4C1000E-GC10 Mask Rom, Memory Density:8.3886 Mbit, Memory Width:16, Organization:512KX16, Supply Voltage-Nom (Vsup):5 V, Power Supplies:5 V, Access Time-Max:100 ns
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