Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor SGW6N60UFD IGBT, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:7.5 V, Collector Current-Max (IC):6 A, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, Number of Elements:1
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Samsung
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Modules
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