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SGW5N60RUFD

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Samsung SGW5N60RUFD

Samsung SGW5N60RUFD overview

Samsung Semiconductor SGW5N60RUFD IGBT, Collector-Emitter Voltage-Max:600 V, Collector Current-Max (IC):8 A, Polarity/Channel Type:N-CHANNEL, Surface mount:YES,...

Manufactured bySamsung
Part number or familySGW5N60RUFD
Product groupModules

Product details

Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor SGW5N60RUFD IGBT, Collector-Emitter Voltage-Max:600 V, Collector Current-Max (IC):8 A, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, Number of Elements:1

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