Product details
Manufactured bySamsung
Product groupModules
DescriptionSAMSUNG KFG1G16U2C-DiB6 Integrated Circuit
DescriptionSamsung Semiconductor KFG1G16U2C-DIB6 Flash Memory, Memory Density:1.0737 Gbit, Memory Width:16, Organization:64MX16, Supply Voltage-Nom (Vsup):3.3 V, Access Time-Max:76 ns
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Samsung
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| # | Name |
|---|---|
| 1 | KFG1G16U2C-DiB6 |