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MS18R1622AH0-CM9

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Samsung MS18R1622AH0-CM9

Samsung MS18R1622AH0-CM9 overview

Samsung Semiconductor MS18R1622AH0-CM9 Dram, Memory Density:603.9798 Mbit, Memory Width:18, Organization:32MX18, Supply Voltage-Nom (Vsup):2.5 V, Power Supplies...

Manufactured bySamsung
Part number or familyMS18R1622AH0-CM9
Product groupModules

Product details

Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor MS18R1622AH0-CM9 Dram, Memory Density:603.9798 Mbit, Memory Width:18, Organization:32MX18, Supply Voltage-Nom (Vsup):2.5 V, Power Supplies:1.8/2.5, 2.5 V, Access Time-Max:35 ns, Clock Frequency-Max (fCLK):1.066 GHz, Access Mode:BLOCK ORIENTED PROTOCOL

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