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MR18R1628MN0-CK7

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Samsung MR18R1628MN0-CK7

Samsung MR18R1628MN0-CK7 overview

Samsung Semiconductor MR18R1628MN0-CK7 Dram, Memory Density:2.4159 Gbit, Memory Width:18, Organization:128MX18, Supply Voltage-Nom (Vsup):2.5 V, Power Supplies:...

Manufactured bySamsung
Part number or familyMR18R1628MN0-CK7
Product groupModules

Product details

Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor MR18R1628MN0-CK7 Dram, Memory Density:2.4159 Gbit, Memory Width:18, Organization:128MX18, Supply Voltage-Nom (Vsup):2.5 V, Power Supplies:1.8/2.5, 2.5 V, Access Time-Max:45 ns, Clock Frequency-Max (fCLK):711 MHz, Access Mode:BLOCK ORIENTED PROTOCOL

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