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MR18R1628DF0-CT9

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Samsung MR18R1628DF0-CT9

Samsung MR18R1628DF0-CT9 overview

Samsung MR18R1628DF0-CT9 Rambus Memory, MR18R1628DF0-CT9 AOT 256MB 184p PC1066-32 8d ECC RDRAM RIMM, Samsung Samsung Semiconductor MR18R1628DF0-CT9 Dram, Memory...

Manufactured bySamsung
Part number or familyMR18R1628DF0-CT9
Product groupModules

Product details

Manufactured bySamsung
Product groupModules
DescriptionSamsung MR18R1628DF0-CT9 Rambus Memory, MR18R1628DF0-CT9 AOT 256MB 184p PC1066-32 8d ECC RDRAM RIMM, Samsung
DescriptionSamsung Semiconductor MR18R1628DF0-CT9 Dram, Memory Density:2.4159 Gbit, Memory Width:18, Organization:128MX18, Supply Voltage-Nom (Vsup):2.5 V, Power Supplies:1.8/2.5, 2.5 V, Clock Frequency-Max (fCLK):1.066 GHz, Access Mode:BLOCK ORIENTED PROTOCOL

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