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MR18R1624EG0-CK8

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Samsung MR18R1624EG0-CK8

Samsung MR18R1624EG0-CK8 overview

Samsung Semiconductor MR18R1624EG0-CK8 Dram, Memory Density:1.208 Gbit, Memory Width:18, Organization:64MX18, Supply Voltage-Nom (Vsup):2.5 V, Power Supplies:1....

Manufactured bySamsung
Part number or familyMR18R1624EG0-CK8
Product groupModules

Product details

Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor MR18R1624EG0-CK8 Dram, Memory Density:1.208 Gbit, Memory Width:18, Organization:64MX18, Supply Voltage-Nom (Vsup):2.5 V, Power Supplies:1.8/2.5, 2.5 V, Access Time-Max:45 ns, Clock Frequency-Max (fCLK):800 MHz, Access Mode:BLOCK ORIENTED PROTOCOL

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