Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung MR18R082GBN1-CG6 Rambus Memory, MR18R082GBN1-CG6 APF 256MB 184p PC600-53 16d ECC RDRAM RIMM, Samsung
DescriptionSamsung Semiconductor MR18R082GBN1-CG6 Dram, Memory Density:2.4159 Gbit, Memory Width:18, Organization:128MX18, Supply Voltage-Nom (Vsup):2.5 V, Power Supplies:1.8/2.5, 2.5 V, Clock Frequency-Max (fCLK):600 MHz, Access Mode:BLOCK ORIENTED PROTOCOL
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Modules
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