Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung MR18R0828BN1-CG6 Rambus Memory, MR18R0828BN1-CG6 AEU 128MB 184p PC600-53 8d ECC RDRAM RIMM T003-RFB Korea, Samsung
DescriptionSamsung Semiconductor MR18R0828BN1-CG6 Dram, Memory Density:1.208 Gbit, Memory Width:18, Organization:64MX18, Supply Voltage-Nom (Vsup):2.5 V, Power Supplies:1.8/2.5, 2.5 V, Access Time-Max:53.3 ns, Clock Frequency-Max (fCLK):600 MHz, Access Mode:BLOCK ORIENTED PROTOCOL
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Samsung
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Modules
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