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MR18R0826AN1-CK7

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Samsung MR18R0826AN1-CK7

Samsung MR18R0826AN1-CK7 overview

Samsung Semiconductor MR18R0826AN1-CK7 Dram, Memory Density:905.9697 Mbit, Memory Width:18, Organization:48MX18, Supply Voltage-Nom (Vsup):2.5 V, Power Supplies...

Manufactured bySamsung
Part number or familyMR18R0826AN1-CK7
Product groupModules

Product details

Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor MR18R0826AN1-CK7 Dram, Memory Density:905.9697 Mbit, Memory Width:18, Organization:48MX18, Supply Voltage-Nom (Vsup):2.5 V, Power Supplies:1.8/2.5, 2.5 V, Access Time-Max:45 ns, Clock Frequency-Max (fCLK):711 MHz, Access Mode:BLOCK ORIENTED PROTOCOL

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