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MR16R1622DF0-CT9

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Samsung MR16R1622DF0-CT9

Samsung MR16R1622DF0-CT9 overview

Samsung MR16R1622DF0-CT9 Rambus Memory, MR16R1622DF0-CT9 BLR 64MB 184p PC1066-32 2d nonECC RDRAM RIMM, Samsung Samsung Semiconductor MR16R1622DF0-CT9 Dram, Memo...

Manufactured bySamsung
Part number or familyMR16R1622DF0-CT9
Product groupModules

Product details

Manufactured bySamsung
Product groupModules
DescriptionSamsung MR16R1622DF0-CT9 Rambus Memory, MR16R1622DF0-CT9 BLR 64MB 184p PC1066-32 2d nonECC RDRAM RIMM, Samsung
DescriptionSamsung Semiconductor MR16R1622DF0-CT9 Dram, Memory Density:536.8709 Mbit, Memory Width:16, Organization:32MX16, Supply Voltage-Nom (Vsup):2.5 V, Power Supplies:1.8/2.5, 2.5 V, Access Time-Max:32 ns, Clock Frequency-Max (fCLK):1.066 GHz, Access Mode:BLOCK ORIENTED PROTOCOL

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